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d a t a sh eet product speci?cation supersedes data of october 1992 1998 jan 21 discrete semiconductors blf544 uhf power mos transistor m3d076
1998 jan 21 2 philips semiconductors product speci?cation uhf power mos transistor blf544 features high power gain easy power control good thermal stability gold metallization ensures excellent reliability designed for broadband operation. applications communication transmitters in the uhf frequency range. description n-channel enhancement mode vertical d-mos power transistor encapsulated in a 6-lead, sot171a flange package with a ceramic cap. all leads are isolated from the flange. a marking code showing gate-source voltage (v gs ) information is provided for matched pair applications. pinning - sot171a pin symbol description 1 s source 2 s source 3 g gate 4 d drain 5 s source 6 s source fig.1 simplified outline and symbol. handbook, halfpage s d g mam390 1 2 3 4 5 6 top view quick reference data rf performance at t h =25 c in a common source class-b circuit. mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) cw, class-b 500 28 20 > 11 > 50 cw, class-b 960 28 20 typ. 7 typ. 50 caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b. warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste.
1998 jan 21 3 philips semiconductors product speci?cation uhf power mos transistor blf544 limiting values in accordance with the absolute maximum system (iec 134). thermal characteristics symbol parameter conditions min. max. unit v ds drain-source voltage - 65 v v gs gate-source voltage - 20 v i d drain current (dc) - 3.5 a p tot total power dissipation t mb 25 c - 48 w t stg storage temperature - 65 150 c t j junction temperature - 200 c symbol parameter value unit r th j-mb thermal resistance from junction to mounting base 3.7 k/w r th mb-h thermal resistance from mounting base to heatsink 0.4 k/w fig.2 dc soar. (1) current is this area may be limited by r dson. (2) t mb =25 c. handbook, halfpage 10 - 1 1 10 11010 2 (1) i d (a) v ds (v) mra992 (2) fig.3 power/temperature derating curves. (1) short-time operation during mismatch. (2) continuous operation. handbook, halfpage 0 (1) (2) 40 80 p tot (w) 160 60 20 0 40 120 mbk442 t h ( c)
1998 jan 21 4 philips semiconductors product speci?cation uhf power mos transistor blf544 characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d =10ma 65 -- v i dss drain-source leakage current v gs = 0; v ds =28v -- 1ma i gss gate-source leakage current v gs = 20 v; v ds =0 -- 1 m a v gsth gate-source threshold voltage i d = 40 ma; v ds =10v 1 - 4v d v gsth gate-source voltage difference of matched pairs i d = 40 ma; v ds =10v -- 100 mv g fs forward transconductance i d = 1.2 a; v ds = 10 v 600 900 - ms r dson drain-source on-state resistance i d = 1.2 a; v gs =10v - 0.85 1.25 w i dsx on-state drain current v gs = 15 v; v ds =10v - 4.8 - a c is input capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 32 - pf c os output capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 24 - pf c rs feedback capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 6.4 - pf fig.4 temperature coefficient of gate-source voltage as a function of drain current; typical values. v ds =10v. handbook, halfpage 4 - 4 0 2 - 2 mda504 i d (a) t.c (mv/k) 110 10 - 2 10 - 1 fig.5 drain current as a function of gate-source voltage; typical values. v ds =10v;t j =25 c. handbook, halfpage 0 6 4 2 0 5 v gs (v) i d (a) 10 20 15 mda505
1998 jan 21 5 philips semiconductors product speci?cation uhf power mos transistor blf544 fig.6 drain-source on-state resistance as a function of junction temperature; typical values. i d = 1.2 a; v gs =10v. handbook, halfpage 050 r dson ( w ) 100 150 2 0 1.6 1.2 0.8 0.4 mda506 t j ( c) fig.7 input and output capacitance as functions of drain-source voltage; typical values. v gs = 0; f = 1 mhz. handbook, halfpage 010 v ds (v) c (pf) 20 30 100 0 80 60 40 20 mda507 c is c os fig.8 feedback capacitance as a function of drain-source voltage; typical values. v gs = 0; f = 1 mhz. handbook, halfpage 0102030 40 30 10 0 20 mda508 c rs (pf) v ds (v)
1998 jan 21 6 philips semiconductors product speci?cation uhf power mos transistor blf544 application information t h =25 c; r th mb-h = 0.4 k/w unless otherwise speci?ed. rf performance in a common source class-b circuit. ruggedness in class-b operation the blf544 is capable of withstanding a full load mismatch corresponding to vswr = 50 : 1 through all phases under the following conditions: v ds = 28 v; f = 500 mhz at rated output power. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) cw, class-b 500 28 40 20 > 11 typ. 14 > 50 typ. 60 cw, class-b 960 28 40 20 typ. 7 typ. 50 cw, class-b 960 24 40 15 typ. 7 typ. 50 fig.9 power gain and efficiency as functions of load power; typical values. class-b operation; v ds = 28 v; i dq =40ma; z l = 4.3 + j6.3 w ; f = 500 mhz. handbook, halfpage 10 30 20 0 4 8 12 16 14 18 40 60 80 22 g p (db) 26 mda512 p l (w) g p h d h d (%) fig.10 load power as a function of input power; typical values. class-b operation; v ds = 28 v; i dq =40ma; z l = 4.3 + j6.3 w ; f = 500 mhz. handbook, halfpage 0 30 20 10 0 1 p l (w) p in (w) 23 mda513
1998 jan 21 7 philips semiconductors product speci?cation uhf power mos transistor blf544 fig.11 test circuit for class-b operation. f = 500 mhz handbook, full pagewidth mda502 d.u.t. blf544 c3 c8 c2 l1 c1 l4 l8 l5 l9 l3 l2 c17 50 w output 50 w input + v d c9 c10 c11 c12 c13 r1 r5 l7 c6 r2 l6 c5 c4 c14 c15 c16 c7 r3 r4
1998 jan 21 8 philips semiconductors product speci?cation uhf power mos transistor blf544 list of components (see figs 11 and 12) . notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. american technical ceramics (atc) capacitor, type 100a or other capacitor of the same quality. 3. the striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced ptfe ( e r = 2.2); thickness 1 32 inch. component description value dimensions catalogue no. c1, c6, c11, c17 multilayer ceramic chip capacitor; note 1 390 pf; 500 v c2 multilayer ceramic chip capacitor; note 2 16 pf; 50 v c3, c5 ?lm dielectric trimmer 2 to 9 pf 2222 809 09002 c4 multilayer ceramic chip capacitor; note 2 27 pf; 50 v c7 multilayer ceramic chip capacitor 2 100 nf in parallel; 50 v 2222 852 47104 c8, c9 multilayer ceramic chip capacitor; note 2 39 pf c10, c12 multilayer ceramic chip capacitor 100 nf; 50 v 2222 852 47104 c13 electrolytic capacitor 4.7 m f; 63 v 2222 030 38478 c14 multilayer ceramic chip capacitor; note 1 20 pf; 500 v c15, c16 ?lm dielectric trimmer 2 to 18 pf 2222 809 09003 l1 stripline note 3 50 w 9.5 2.5 mm l2 stripline note 3 50 w 34.5 2.5 mm l3 stripline note 3 50 w 17.5 2.5 mm l4, l5 stripline note 3 42 w 3 3mm l6 4 turns enamelled 0.8 mm copper wire 31 nh length 7.5 mm int. dia. 3 mm leads 2 5mm l7 grade 3b ferroxcube rf choke 4312 020 36642 l8 stripline note 3 50 w 22 2.5 mm l9 stripline note 3 50 w 39.5 2.5 mm r1, r2 0.4 w metal ?lm resistor 1 k w 2322 151 11002 r3 10 turns cermet potentiometer 50 k w r4 0.4 w metal ?lm resistor 140 k w 2322 151 11404 r5 1 w metal ?lm resistor 10 w 2322 153 51009
1998 jan 21 9 philips semiconductors product speci?cation uhf power mos transistor blf544 fig.12 component layout for 500 mhz class-b test circuit. the circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth + v d 150 70 c1 r3 c7 r2 r1 c2 c4 c10 c6 c11 c14 c17 l1 l2 l3 l4 l5 l6 l8 l9 c5 c8 c9 c15 c13 r5 c12 l7 c3 mda501 c16 mounting screw mounting screw straps straps straps rivets straps dimensions in mm.
1998 jan 21 10 philips semiconductors product speci?cation uhf power mos transistor blf544 fig.13 test circuit for class-b operation. f = 960 mhz. handbook, full pagewidth mda503 d.u.t. blf544 c3 c8 c2 l1 c1 l4 l8 l5 l9 l10 l3 l2 c19 50 w output 50 w input + v d c9 c11 r1 r4 l7 l6 c5 c4 c13 c15 c17 c16 c14 c18 c6 c7 r2 r3 c12 c10
1998 jan 21 11 philips semiconductors product speci?cation uhf power mos transistor blf544 list of components (see figs 12 and 13) notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. american technical ceramics (atc) capacitor, type 100a or other capacitor of the same quality. 3. the striplines are on a double copper-clad printed-circuit board with glass microfibre reinforced ptfe ( e r = 2.2); thickness 1 32 inch. component description value dimensions catalogue no. c1 multilayer ceramic chip capacitor; note 1 68 pf; 500 v c2 multilayer ceramic chip capacitor; note 2 1.6 pf; 50 v c3, c5, c16, c18 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09001 c4 multilayer ceramic chip capacitor; note 2 1 pf; 50 v c6 multilayer ceramic chip capacitor 10 nf; 50 v 2222 852 47103 c7, c11 multilayer ceramic chip capacitor; note 1 56 m f; 500 v c8, c9, c15, c17 multilayer ceramic chip capacitor note 2 6.8 m f; 50 v c10 multilayer ceramic chip capacitor 100 nf; 50 v 2222 852 47104 c12 electrolytic capacitor 4.7 m f; 63 v 2222 030 38478 c13 multilayer ceramic chip capacitor; note 2 16 pf; 50 v c14 multilayer ceramic chip capacitor; note 2 18 pf; 50 v c19 multilayer ceramic chip capacitor; note 1 62 pf; 500 v l1, l8 stripline; note 3 50 w 6 2.5 mm l2 stripline; note 3 50 w 38 2.5 mm l3 stripline; note 3 50 w 17.5 2.5 mm l4, l5 stripline; note 3 42 w 3 3mm l6 2 turns enamelled 1 mm copper wire 16 nh length 3.4 mm int. dia. 3 mm leads 2 5mm l7 grade 3b ferroxcube rf choke 4312 020 36642 l9 stripline; note 3 50 w 21 2.5 mm l10 stripline; note 3 50 w 34.5 2.5 mm r1 0.4 w metal ?lm resistor 15 k w 2322 151 11473 r2 10 turns potentiometer 50 k w r3 0.4 w metal ?lm resistor 140 k w 2322 151 11404 r4 0.4 w metal ?lm resistor 10 w 2322 153 51009
1998 jan 21 12 philips semiconductors product speci?cation uhf power mos transistor blf544 fig.14 input impedance as a function of frequency (series components); typical values. class-b operation; v ds = 28 v; i dq = 40 ma; p l =20w. handbook, halfpage 0 r i x i 200 400 600 5 0 - 10 - 15 - 5 mda509 z i ( w ) f (mhz) fig.15 load impedance as a function of frequency (series components); typical values. class-b operation; v ds = 28 v; i dq = 40 ma; p l =20w. handbook, halfpage 0 r l x l 200 400 600 20 15 5 0 10 mda510 z l ( w ) f (mhz) fig.16 power gain as a function of frequency; typical values. class-b operation; v ds = 28 v; i dq = 40 ma; p l =20w. handbook, halfpage 0 30 20 10 0 200 g p (db) f (mhz) 400 600 mda511 optimum input and load impedances optimum input impedance: 1.2 + j4.8 w . optimum load impedance: 2.6 - j3.1 w . conditions: class-b operation; v ds =24v; i dq = 40 ma; f = 960 mhz; p l = 15 w; typical values.
1998 jan 21 13 philips semiconductors product speci?cation uhf power mos transistor blf544 package outline references outline version european projection issue date iec jedec eiaj sot171a 97-06-28 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 6 leads sot171a 1 2 3 4 5 6 u 2 e e 1 h q d d 1 a f c a b m w 3 h 1 m b 1 c w 2 e u 1 q p c w 1 ab m b unit a mm d b 2.15 1.85 b 1 3.20 2.89 0.16 0.07 9.25 9.04 d 1 9.30 8.99 e 5.95 5.74 3.58 11.31 10.54 6.00 5.70 6.81 6.07 c e 1 u 2 0.26 0.51 1.02 w 3 18.42 qw 2 w 1 f 3.05 2.54 u 1 24.90 24.63 h 1 9.27 9.01 p 3.43 3.17 q 4.32 4.11 e 6.00 5.70 inches 0.085 0.073 0.126 0.114 0.006 0.003 0.364 0.356 0.366 0.354 0.234 0.226 0.140 0.445 0.415 0.236 0.224 0.268 0.239 0.01 0.02 0.04 0.725 0.120 0.100 0.980 0.970 0.365 0.355 0.135 0.125 0.170 0.162 0.236 0.224 h dimensions (millimetre dimensions are derived from the original inch dimensions)
1998 jan 21 14 philips semiconductors product speci?cation uhf power mos transistor blf544 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1998 jan 21 15 philips semiconductors product speci?cation uhf power mos transistor blf544 notes
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